MC68HC908GP16CFB Freescale Semiconductor, MC68HC908GP16CFB Datasheet - Page 37

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MC68HC908GP16CFB

Manufacturer Part Number
MC68HC908GP16CFB
Description
MCU 8-BIT 16K FLASH 44-QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908GP16CFB

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
33
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

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Quantity
Price
Part Number:
MC68HC908GP16CFB
Manufacturer:
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Quantity:
10 000
2.6.2 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1:
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
Freescale Semiconductor
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Due to the security feature (see
of the FLASH (0xFFDC–0xFFFF), which contains the security bytes,
cannot be erased by Page Erase Operation. It can only be erased with the
Mass Erase Operation.
RCV
(typical 1 µs), the memory can be accessed in read mode again.
NVS
Erase
NVH
(minimum 10 µs).
(minimum 5 µs).
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
(minimum 1 ms or 4 ms).
19.3 Monitor Module
NOTE
NOTE
(MON)) the last page
FLASH Memory (FLASH)
37

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