DF2552BR26DV Renesas Electronics America, DF2552BR26DV Datasheet - Page 751

IC H8S/2552 MCU FLASH 176-LFBGA

DF2552BR26DV

Manufacturer Part Number
DF2552BR26DV
Description
IC H8S/2552 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Datasheets

Specifications of DF2552BR26DV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2552BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
20.4.2
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview flow is shown in figure 20.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby must not be executed. Doing so may cause
damage or destroy flash memory. If reset is executed accidentally, reset must be released after the
reset input period of 100 μs, which is longer than usual.
User Program Mode
program data is prepared
transferred to the on-chip
Programming/erasing
Programming/erasing
When programming,
Programming/erasing
procedure program is
RAM and executed
FLSHE = 1?
start
end
Yes
Figure 20.9 Programming/Erasing Overview Flow
No
1.
2.
3.
4.
5.
RAM emulation mode must be canceled in advance. Download
cannot be executed in emulation mode.
When the program data is made by means of emulation, change
the download destination by the FTDAR register. Note that the
download area and the emulation area will overlap if FTDAR is
H'04.
Set FLSHE bit in SYSCR2 register to 1.
Programming/erasing is executed only in the on-chip RAM.
However, if program data is in a consecutive area and can be
accessed by the MOV.B instruction of the CPU like SRAM or
ROM, the program data can be in an external space.
After programming/erasing is finished, the FLSHE bit is cleared
to 0 and protected.
Rev. 6.00 Sep. 24, 2009 Page 703 of 928
Section 20 Flash Memory
REJ09B0099-0600

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