DF2552BR26DV Renesas Electronics America, DF2552BR26DV Datasheet - Page 952

IC H8S/2552 MCU FLASH 176-LFBGA

DF2552BR26DV

Manufacturer Part Number
DF2552BR26DV
Description
IC H8S/2552 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Datasheets

Specifications of DF2552BR26DV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2552BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 24 Electrical Characteristics
24.6
Table 24.12 lists the D/A conversion characteristics.
Table 24.12 D/A Conversion Characteristics
Condition A
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 26 MHz, T
specifications)
Condition B
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 20 MHz, Ta = –40°C to +85°C (wide-range specifications)
Notes: 1. The regular specifications are supported in the H8S/2506 Group only.
Rev. 6.00 Sep. 24, 2009 Page 904 of 928
REJ09B0099-0600
Item
Resolution
Conversion time
Absolute accuracy*
CC
CC
CC
CC
= P1V
= P1V
= 3.0 V to 5.5 V, V
= 3.0 V to 5.5 V, V
2. Except module stop, software standby, and watch modes.
D/A Conversion Characteristics
CC
CC
= P2V
= P2V
a
= –20°C to +75°C (regular specifications)*
(for H8S/2552 Group, H8S/2506 Group):
(for H8S/2556 Group):
CC
CC
2
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
Min.
8
ref
ref
= 3.0 V to AV
= 3.0 V to AV
Typ.
8
±2.0
Max.
8
10
±3.0
±2.0
CC
CC
, V
, V
SS
SS
= AV
= AV
Unit
bits
µs
LSB
LSB
SS
SS
= 0 V, φ= 32.768 kHz,
= 0 V, φ= 32.768 kHz,
Test Conditions
Load capacitance: 20 pF
Load resistance: 2 MΩ
Load resistance: 4 MΩ
1
, T
a
= –40°C to +85°C (wide-range

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