MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 117

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F8G08ABABAWP-IT:B
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Figure 77:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
W/R#
R/B#
DQS
DQx
CE#
ALE
CLK
CLE
t DQSS
D
N
IN
N+1
D
IN
PROGRAM PAGE Operation (2 of 2)
1
M-2
D
IN
M-1
D
IN
t CALS
D
M
IN
Micron Confidential and Proprietary
t CAD
8Gb Asychronous/Synchronous NAND Flash Memory
10h
t WB
117
t PROG
READ STATUS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
command
70h
t CAD
t WHR
t DQSD
©2008 Micron Technology, Inc. All rights reserved.
t CKWR
Timing Diagrams
Status
Don’t Care
Status
t DQSHZ
t RHW
Advance
Driven

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