MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 91

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Synchronous AC Overshoot/Undershoot Specifications
Table 21:
Figure 61:
Figure 62:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Overshoot / Undershoot Parameters
Overshoot
Undershoot
The supported AC overshoot and undershoot area depends on the timing mode selected
by the host.
Parameter
Maximum peak amplitude provided
for overshoot area
Maximum peak amplitude provided
for undershoot area
Maximum overshoot are above V
Maximum undershoot area below
V
SS
Q
Micron Confidential and Proprietary
Synchronous AC Overshoot/Undershoot Specifications
8Gb Asychronous/Synchronous NAND Flash Memory
91
CC
Q
(50ns)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
1
1
3
3
(30ns)
1
1
1
3
3
Timing Mode
(20ns)
2
1
1
3
3
©2008 Micron Technology, Inc. All rights reserved.
(15ns)
2.25
2.25
3
1
1
(12ns)
1.8
1.8
4
1
1
Advance
Unit
V-ns
V-ns
V
V