MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 70

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Figure 45:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Cycle type
(DQ[7:0])
I/O[7:0]
RDY
READ PAGE MULTI-PLANE (00h–32h) Operation
Command
00h
Note:
Note:
Note:
Address
C1
3. 32h is written to the command register. (The column address in the address specified
1. R/B# goes LOW and the LUN is busy (RDY = 0, ARDY = 0) for
2. R/B# goes HIGH and the LUN is ready (RDY = 1, ARDY = 1).
3. The LUN and block are queued for data transfer from the array to the cache register
4. The READ PAGE (00h-30h) command is issued.
5. Data is transferred from the NAND Flash array for all of the addressed planes to their
6. When the LUN is ready (RDY = 1, ARDY = 1), data output is enabled for the cache reg-
7. When the host requests data output, it begins at the column address specified in the
After this command is issued, the following sequence occurs:
See “Multi-Plane Addressing” on page 86 for additional multi-plane addressing require-
ments.
is ignored.)
During
commands (FFh, FCh). Following
the only valid commands are status operations (70h, 78h), READ PAGE MULTI-PLANE
(00h-32h), and READ PAGE (00h-30h).
for the addressed plane.
Additional READ PAGE MULTI-PLANE (00h-32h) commands can be issued to queue
additional planes for data transfer.
respective cache registers.
ister linked to the even plane.
READ PAGE (00h-30h) command.
To enable data output in the other cache registers, the SELECT CACHE REGISTER
(06h-E0h) command can be issued. Also, to change the column address within the
currently selected plane, the CHANGE READ COLUMN (05h-E0h) command can be
issued.
Address
C2
t
DBSY, the only valid commands are status operations (70h, 78h) and reset
Micron Confidential and Proprietary
Address
R1
8Gb Asychronous/Synchronous NAND Flash Memory
Address
R2
70
Address
R3
t
DBSY, to continue the multi-plane read operation,
Command
Micron Technology, Inc., reserves the right to change products or specifications without notice.
32h
t WB
t DBSY
Command
Command Definitions
00h
©2008 Micron Technology, Inc. All rights reserved.
t
DBSY.
Address
C1
Address
...
Advance

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