MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 98

no-image

MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F8G08ABABAWP-IT:B
Manufacturer:
VITESSE
Quantity:
101
Part Number:
MT29F8G08ABABAWP-IT:B
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT29F8G08ABABAWP-IT:B
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT29F8G08ABABAWP-IT:B
Quantity:
1 000
Table 36:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Parameter
Clock Period
Frequency
Access window of
DQ[7:0] from CLK
ALE to data loading
time
Cmd, Addr,
Data delay
ALE, CLE,
W/R# hold
ALE, CLE,
W/R# setup
DQ hold -
Cmd, Addr
DQ setup -
Cmd, Addr
Change column
setup to data in/out
or next command
CE# hold
Average CLK cycle
time
Absolute CLK cycle
time, from rising
edge rising edge
CLK cycle HIGH
CLK cycle LOW
Data output end to
W/R# HIGH
CE# setup
Data In hold
Access window of
DQS from CLK
DQS, DQ[7:0] Driven
by NAND
DQS, DQ[7:0] to
tri-state
DQS input high pulse
width
DQS input low pulse
width
DQS-DQ skew
Data input
Data In setup
AC Characteristic: Synchronous Command, Address, and Data
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
(abs)
t
(abs)
t
t
t
t
t
t
t
t
t
t
t
AC
ADL
CAD
CALH
CALS
CAH
CAS
CCS
CH
CK (avg)
CK (abs)
CKH
CKL
CKWR
CS
DH
DQSCK
DQSD
DQSHZ
DQSH
DQSL
DQSQ
DQSS
DS
Min
0.43
0.43
0.75
100
200
0.4
0.4
25
10
10
10
10
10
50
35
Mode 0
5
0
5
≈20
50
Max
0.57
0.57
1.25
100
0.6
0.6
Micron Confidential and Proprietary
t
20
20
20
20
CKWR(MIN) = RoundUp[
5
t
CK (abs) MAX =
t
8Gb Asychronous/Synchronous NAND Flash Memory
Min
0.43
0.43
0.75
CK (abs) MIN =
100
200
2.5
0.4
0.4
25
30
25
Mode 1
5
5
5
5
5
0
3
≈33
30
Max
0.57
0.57
1.25
0.6
0.6
2.5
20
50
20
20
20
98
t
CKWR(MAX): -
Min
0.43
0.43
0.75
200
1.7
0.4
0.4
70
25
20
15
Mode 2
t
t
4
4
4
4
4
0
2
CK (avg) +
CK (avg) +
≈50
20
t
DQSCK(MAX) +
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
0.57
0.57
1.25
0.6
0.6
1.7
20
30
20
20
20
t
t
JIT(per) MIN
JIT(per) MAX
Min
0.43
0.43
0.75
200
1.3
0.4
0.4
1.5
70
25
15
15
Mode 3
3
3
3
3
3
0
≈67
15
Max
0.57
0.57
1.25
t
0.6
0.6
1.3
20
20
20
20
20
CK) /
Electrical Characteristics
t
Min
0.43
0.43
CK]
0.75
200
1.1
2.5
2.5
2.5
2.5
2.5
0.4
0.4
1.1
70
25
12
15
Mode 4
0
©2008 Micron Technology, Inc. All rights reserved.
≈83
12
Max
0.57
0.57
1.25
0.6
0.6
1.1
20
15
20
20
20
2
Unit
MHz
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
Advance
Notes
1
2
3
4
4
5

Related parts for MT29F8G08ABABAWP-IT:B