MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 38

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Figure 27:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Activating the Synchronous Interface
Notes:
1. TM = Timing mode.
Cycle Type
SR[6]
DQx
CMD ADDR
EFh
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
01h
t ADL
38
DIN
TM
DIN
P2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DIN
P3
DIN
P4
t CAD
transitions HIGH
t WB
A
CE# may
100 ns
B
t ITC
Activating Interfaces
©2008 Micron Technology, Inc. All rights reserved.
CE# may
transition LOW
C
Advance

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