MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 21

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Write Protect (WP#)
Ready/Busy# (R/B#)
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Where Σ
Where R
The WP# signal enables or disables PROGRAM and ERASE operations to a target. When
WP# is LOW, PROGRAM and ERASE operations are disabled. When WP# is HIGH,
PROGRAM and ERASE operations are enabled.
It is recommended that the host drive WP# LOW during power-on until Vcc and VccQ
are stable to prevent inadvertent PROGRAM and ERASE operations (see “Vcc Power
Cycling” on page 35 for additional details).
WP# must be transitioned only when the target is not busy and prior to beginning a
command sequence. After a command sequence is complete and the target is ready,
WP# can be transitioned. After WP# is transitioned the host must wait
issuing a new command.
The WP# signal is always an active input, even when CE# is HIGH. This signal should not
be multiplexed with other signals.
The R/B# signal provides a hardware method of indicating whether a target is ready or
busy. A target is busy when one or more of its LUNs are busy (RDY = "0"). A target is ready
when all of its LUNs are ready (RDY = "1"). Because each LUN contains a status register,
it is possible to determine the independent status of each LUN by polling its status
register instead of using the R/B# signal (see “Status Operations” on page 56 for details
regarding LUN status).
This signal requires a pull-up resistor, Rp, for proper operation. R/B# is HIGH when the
target is ready, and transitions LOW when the target is busy. The signal's open-drain
driver enables multiple R/B# outputs to be OR-tied. Typically, R/B# is connected to an
interrupt pin on the system controller (see Figure 14 on page 22).
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# signal. The actual value used for Rp depends on the system timing
requirements. Large values of Rp cause R/B# to be delayed significantly. Between the 10-
to 90-percent points on the R/B# waveform, the rise time is approximately two time
constants (TC).
The fall time of the R/B# signal is determined mainly by the output impedance of the R/
B# signal and the total load capacitance. Approximate Rp values using a circuit load of
100pF are provided in Figure 19 on page 24.
The minimum value for Rp is determined by the output drive capability of the R/B#
signal, the output voltage swing, and VCCQ.
IL
=
is the sum of the input currents of all devices tied to the R/B# pin.
Rp (resistance of pull-up resistor), and C
Micron Confidential and Proprietary
Rp
8Gb Asychronous/Synchronous NAND Flash Memory
=
V
---------------------------------------------------------------
CC
TC
(
MAX
=
I
21
OL
R C
) V
+
×
Σ
OL
IL
(
MAX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
=
)
total capacitive load.
©2008 Micron Technology, Inc. All rights reserved.
Bus Operation
t
WW before
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