MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 79

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

COPYBACK READ (00h–35h)
Figure 52:
Figure 53:
COPYBACK PROGRAM (85h–10h)
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
I/O[7:0] (DQ[7:0])
Cycle type
Cycle type
(DQ[7:0])
(DQ[7:0])
I/O[7:0]
I/O[7:0]
Cycle type
RDY
RDY
RDY
COPYBACK READ (00h–35h) Operation
COPYBACK READ (00h–35h) with CHANGE READ COLUMN (05h–E0h) Operation
1
Command
Command
00h
Command
05h
00h
Address
The COPYBACK READ (00h-35h) command is functionally identical to the READ PAGE
(00h-30h) command, except that 35h is written to the command register instead of 30h.
See “READ PAGE (00h–30h)” on page 64 for further details.
Though it is not required, it is recommended that the host read the data out of the device
to verify the data prior to issuing the COPYBACK PROGRAM (85h-10h) command to
prevent the propagation of data errors.
The COPYBACK PROGRAM (85h-10h) command is functionally identical to the
PROGRAM PAGE (80h-10h) command, except that when 85h is written to the command
register, cache register contents are not cleared. See “PROGRAM PAGE (80h–10h)” on
page 72 for further details.
Address
C1
Address
C1
C1
Address
Address
C2
Address
C2
C2
Micron Confidential and Proprietary
Address
Command
R1
Address
E0h
8Gb Asychronous/Synchronous NAND Flash Memory
R1
Address
R2
Address
t CCS
R2
79
Address
R3
D
Address
Dk
OUT
R3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command
Dk + 1
D
35h
Command
OUT
35h
t WB
t WB
Dk + 2
D
OUT
t R
t R
t RR
Command Definitions
t RR
D
©2008 Micron Technology, Inc. All rights reserved.
D0
OUT
D
D n
OUT
D
…
OUT
D n+1
D
OUT
Dj + n
D
OUT
D
D n+2
OUT
Advance
1