HD6417144F50V Renesas Electronics America, HD6417144F50V Datasheet - Page 729

• Manufacturer Part Number: HD6417144F50V
• Description: IC SUPERH MCU ROMLESS 112QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7144r

Specifications of HD6417144F50V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-QFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK7145 - DEV EVALUATION KIT SH7145
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

19.11.3 Notes on Flash Memory Programming and Erasing
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Appling excessive
voltage beyond the specification can permanently damage the device. Use an EPROM
programmer that supports the Renesas' microcomputer device having on-chip 256-kbyte flash
memory. Use only the specified socket adapter, otherwise a serious damage may occur.
Powering on and off (see figures 19.11 to 19.13): Do not apply a low level to the FWP pin until
V
applied or disconnected, fix the FWP pin level at V
protection state in advance.
Conditions for this power-on and power-off timing should also be applied in the
event of a power failure and subsequent recovery.
FWP application/disconnection (see figures 19.11 to 19.13): If V
is applied to FWP pin, a voltage surge from low level on the RESET pin may cause unintentional
programming or erasing of flash memory. Applying voltage to FWP should be carried out while
MCU operation is in a stable condition. If MCU operation is not stable, fix the FWP pin high and
set the protection state. The following points must be observed concerning FWP application and
disconnection to prevent unintentional programming or erasing of flash memory:
• Apply voltage to FWP while the V
• In boot mode, apply voltage to FWP or disconnect it during a reset.
• Prior to applying voltage while FWP pin is in low level in boot mode, ensure that the RESET
• In user program mode, FWP can be switched between high and low level regardless of the
•
• Disconnect FWP only when the SWE, ESU, PSU, EV, PV, P, and E bits in FLMCR1 are
Do not apply a constant low level to the FWP pin: If a program runs away while low level is
applied to FWP pin, incorrect programming or erasing may occur. Apply a low level to the FWP
CC
voltage range.
pin level is surely kept low despite the applying voltage is rising to V
where ICs for reset are used, the voltage level of RESET pin can transiently exceed 1/2 V
while V
reset state. FWP input can also be switched during execution of a program in flash memory.
Apply voltage to FWP while programs are not running away.
cleared. Make sure that the SWE, ESU, PSU, EV, PV, P, and E bits are not set by mistake
when applying voltage to FWP pin or disconnecting.
has been stabilized. Also, drive the FWP pin high before turning off V
CC
is rising.
CC
voltage is stable enough to satisfy the specification
CC
and place the flash memory in the hardware
Rev.4.00 Mar. 27, 2008 Page 683 of 882
19. Flash Memory (F-ZTAT Version)
CC
is on or off while low level
CC
CC
. Note that in a case
. If V
REJ09B0108-0400
CC
is to be
CC