HD6417727F100CV Renesas Electronics America, HD6417727F100CV Datasheet - Page 393

• Manufacturer Part Number: HD6417727F100CV
• Description: SH3-DSP, LEAD FREE
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417727F100CV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: FIFO, SCI, SIO, SmartCard, USB
• Peripherals: DMA, LCD, POR, WDT
• Number Of I /o: 104
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.6 V ~ 2.05 V
• Data Converters: A/D 6x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 240-QFP Exposed Pad, 240-eQFP, 240-HQFP
• Cpu Family: SuperH
• Device Core Size: 32b
• Frequency (max): 100MHz
• Interface Type: SCI/USB
• Program Memory Size: Not Required
• Total Internal Ram Size: 16KB
• # I/os (max): 104
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 1.8/3.3V
• Operating Supply Voltage (max): 2.05/3.6V
• Operating Supply Voltage (min): 1.6/2.6V
• On-chip Adc: 6-chx10-bit
• On-chip Dac: 2-chx8-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -20C to 75C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 240
• Package Type: HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

Table 12.13 Relationship between LSI Address Pins and Synchronous DRAM Address Pins
SH7727
Address Pin
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Burst Read: In the example in figure 12.13 it is assumed that four 2M × 8-bit synchronous
DRAMs are connected and a 32-bit data width is used, and the burst length is 1. Following the Tr
cycle in which ACTV command output is performed, a READ command is issued in the Tc1, Tc2,
and Tc3 cycles, and a READA command in the Tc4 cycle, and the read data is accepted on the
rising edge of the external command clock (CKIO) from cycle Td1 to cycle Td4. The Tpc cycle is
used to wait for completion of auto-precharge based on the READA command inside the
synchronous DRAM; no new access command can be issued to the same bank during this cycle,
but access to synchronous DRAM for another area is possible. In this LSI, the number of Tpc
cycles is determined by the TPC bit specification in MCR, and commands cannot be issued for the
same synchronous DRAM during this interval.
To connect low-speed synchronous DRAM, the cycle can be extended by setting WCR2 and MCR
bits. The number of cycles from the ACTV command output cycle, Tr, to the READ command
output cycle, Tc1, can be specified by the RCD bit in MCR, with a values of 0 to 3 specifying 1 to
4 cycles, respectively. In case of 2 or more cycles, a Trw cycle, in which an NOP command is
RAS Cycle
A24
A23
A22
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A0
CAS Cycle
A16
A23
A22
A13
L/H
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
SDRAM
Address Pin
A13
A12
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Unused
Unused
A14
A11
Rev.6.00 Mar. 27, 2009 Page 335 of 1036
Section 12 Bus State Controller (BSC)
Function
Address
BANK select bank address
Address
Address precharge
specification
Address
REJ09B0254-0600