h8s-2161b Renesas Electronics Corporation., h8s-2161b Datasheet - Page 813

• Manufacturer Part Number: h8s-2161b
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2100 Series
• Manufacturer: Renesas Electronics Corporation.

27.2.6
Table 27.30 shows the flash memory characteristics.
Table 27.30 Flash Memory Characteristics (Operation Range at Programming/Erasing)
5-V version conditions: V
3-V version conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Programming
Erase
Flash Memory Characteristics
1
*
3
*
Wait time after SWE-bit setting *
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Wait time after SWE-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Wait time after SWE-bit clear *
Maximum erase count *
6
1
*
2
1
*
*
4
4
*
5
product), T
product)
CC
CC
= 4.0 V to 5.5 V, V
= 3.0 V to 3.6 V, V
1
*
a
6
= –40 to +85°C (wide range temperature specification
*
1
1
7
1
1
1
1
1
1
*
*
1
1
1
1
1
1
4
6
1
1
1
1
Symbol
t
t
N
x
y
z1
z2
z3
N
x
y
z
N
P
E
WEC
SS
SS
= 0 V, T
= 0 V, T
Min
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
Rev. 3.00 Mar 21, 2006 page 759 of 788
a
a
= –20 to +75°C (normal specification
= –20 to +75°C
Section 27 Electrical Characteristics
Typ
10
100
—
—
—
30
200
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
ms/block
times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
times
µs
µs
ms
µs
µs
µs
µs
µs
µs
times
REJ09B0300-0300
Test
Condition
1
7
Additional
write
n
n
6
1000