MC68HC908JG16FA MOTOROLA [Motorola, Inc], MC68HC908JG16FA Datasheet - Page 59

• Manufacturer Part Number: MC68HC908JG16FA
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.4 FLASH Control Register
MC68HC908JG16
MOTOROLA
—
Rev. 1.0
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operation.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM=1 or ERASE=1 and the sequence for erase or
program/verify is followed.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
Freescale Semiconductor, Inc.
For More Information On This Product,
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
$FE08
Bit 7
0
0
Figure 4-2. FLASH Control Register (FLCR)
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= Unimplemented
FLASH Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
FLASH Control Register
ERASE
FLASH Memory
1
0
Technical Data
PGM
Bit 0
0
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