DF2506BR26DV Renesas Electronics America, DF2506BR26DV Datasheet - Page 714

• Manufacturer Part Number: DF2506BR26DV
• Description: IC H8S/2506 MCU FLASH 176-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2500r

Specifications of DF2506BR26DV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 26MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 20 Flash Memory
Note: * Not available in this LSI.
• Emulation function of flash memory by using the on-chip RAM
• Protect Mode
• Programming/erasing time
• Number of programming
Rev. 6.00 Sep. 24, 2009 Page 666 of 928
REJ09B0099-0600
User Branch*
Programming is carried out in 128-byte units through several steps such as applying
programming pulse and reading verify. Erasing is carried out in 1-divided-block unit through
several processing steps. Between these steps, a setting can be created to execute user process
routines. This setting is called "with user branch."
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming
can be emulated in real time.
Software protect by register setting is provided to set the protect status of programming/erasing
flash memory
When an error is detected, the mode is changed to error protect mode to abort
programming/erasing processing.
The flash memory programming time is 3 ms (typ) in 128-byte simultaneous programming and
25 μs per byte. The erasing time is 1000 ms (typ) per 64-kbyte block.
The number of flash memory programming can be minimum 100 times.