DF2506BR26DV Renesas Electronics America, DF2506BR26DV Datasheet - Page 785

• Manufacturer Part Number: DF2506BR26DV
• Description: IC H8S/2506 MCU FLASH 176-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2500r

Specifications of DF2506BR26DV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 26MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Table 20.13 Each Command in Programmer Mode
20.9.3
1. On completion of an automatic program, automatic erase, or status read, the LSI enters a
2. In memory-read mode, command programming can be performed as in the case of command
3. Continuous read can be performed after the transition to memory-read mode is made.
4. Transition to the memory-read mode is made after power has been supplied.
Notes: 1.
Command
Name
Memory-read
mode
Auto- program
mode
Auto-erase
mode
Status-read
mode
command waiting state. To read the contents of memory after these operations, issue the
command to change the mode to memory-read mode before reading from the memory.
waiting state.
For the AC characteristics in memory-read mode, see section 20.11, AC Characteristics and
Timing in Programmer Mode.
2.
Memory-Read Mode
In automatic programming mode, 129 cycles of command programming are required
because of simultaneous 128-byte programming.
In memory-read mode, the number of cycles varies according to the number of
address writing cycles (n).
Cycle
Count
1 + n
129
2
2
Target
Memory
MAT
User MAT
User boot
MAT
User MAT
User boot
MAT
User MAT
User boot
MAT
Common to
both MAT
Mode
write
write
write
write
write
write
write
First Cycle
Address
X
X
X
X
X
X
X
Rev. 6.00 Sep. 24, 2009 Page 737 of 928
Data
H'00
H'05
H'40
H'45
H'20
H'25
H'71
Mode
read
write
write
write
Section 20 Flash Memory
Second Cycle
Address
RA
WA
X
X
REJ09B0099-0600
Data
Dout
Din
H'20
H'71