DF2506BR26DV Renesas Electronics America, DF2506BR26DV Datasheet - Page 758

IC H8S/2506 MCU FLASH 176-LFBGA

DF2506BR26DV

Manufacturer Part Number
DF2506BR26DV
Description
IC H8S/2506 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Datasheets

Specifications of DF2506BR26DV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2506BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory
(m) The return value in the programming program, FPFR (general register R0L) is determined.
(n) Determine whether programming of the necessary data has finished.
(o) After programming finishes, clear FKEY and specify software protection.
(3)
The procedures for download, initialization, and erasing are shown in figure 20.12.
Rev. 6.00 Sep. 24, 2009 Page 710 of 928
REJ09B0099-0600
⎯ Since the stack area is used in the programming program, a stack area of a maximum 128
If more than 128 bytes of data are to be programmed, specify FMPAR and FMPDR in 128-
byte units, and repeat steps (l) to (n). Increment the programming destination address by 128
bytes and update the programming data pointer correctly. If an address which has already been
programmed is written to again, not only will a programming error occur, but also flash
memory will be damaged.
If this LSI is restarted by a power-on reset immediately after user MAT programming has
finished, secure a reset period (period of RES = 0) of 100 μs or longer, which is longer than
usual.
Erasing Procedure in User Program Mode
bytes must be allocated in RAM

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