DF2506BR26DV Renesas Electronics America, DF2506BR26DV Datasheet - Page 766

IC H8S/2506 MCU FLASH 176-LFBGA

DF2506BR26DV

Manufacturer Part Number
DF2506BR26DV
Description
IC H8S/2506 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Datasheets

Specifications of DF2506BR26DV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2506BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory
20.4.4
In the descriptions in the previous section, the programming/erasing procedure programs and
storable areas for program data are assumed to be in the on-chip RAM. However, the program and
the data can be stored in and executed from other areas, such as part of flash memory which is not
to be programmed or erased, or somewhere in the external address space.
(1)
1. The on-chip programming/erasing program is downloaded from the address in the on-chip
2. The on-chip programming/erasing program will use 128 bytes as a stack. So, make sure that
3. Download by setting the SCO bit to 1 will lead to switching of the MAT. If, therefore, this
4. The flash memory is accessible until the start of programming or erasing, that is, until the
5. The flash memory is not accessible during programming/erasing operations, therefore, the
6. After programming/erasing, the flash memory should be inhibited until FKEY is cleared.
7. Switching of the MATs by FMATS should be needed when programming/erasing of the user
8. When the data storable area indicated by programming parameter FMPDR is within the flash
Rev. 6.00 Sep. 24, 2009 Page 718 of 928
REJ09B0099-0600
RAM specified by FTDAR, therefore, this area is not available for use.
this area is secured.
operation is used, it should be executed from the on-chip RAM.
result of downloading has been determined. When in single-chip mode in which the external
address space is not accessible, the required procedure programs, NMI handling vector, NMI
handler, and user branch program should be transferred to the on-chip RAM before
programming/erasing of the flash memory starts.
operation program is downloaded to the on-chip RAM to be executed. The NMI-handling
vector and programs such as that which activate the operation program, and NMI handler
should thus be stored in on-chip memory other than flash memory or the external address
space.
The reset state (RES = 0) must be in place for more than 100 μs when the LSI mode is changed
to reset on completion of a programming/erasing operation.
Transitions to the reset state, and hardware standby mode are inhibited during
programming/erasing. When the reset signal is accidentally input to the chip, a longer period in
the reset state than usual (100 μs) is needed before the reset signal is released.
MAT is operated in user-boot mode. The program which switches the MATs should be
executed from the on-chip RAM. See section 20.7, Switching between User MAT and User
Boot MAT. Please make sure you know which MAT is selected when switching between
them.
memory area, an error will occur even when the data stored is normal. Therefore, the data
Conditions that Apply to Programming/Erasing
Procedure Program and Storable Area for Programming Data

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