HD64F3644H Renesas Electronics America, HD64F3644H Datasheet - Page 186

IC H8 MCU FLASH 32K 64-QFP

HD64F3644H

Manufacturer Part Number
HD64F3644H
Description
IC H8 MCU FLASH 32K 64-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD64F3644H

Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Package
64PQFP
Family Name
H8
Maximum Speed
8 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
45
Interface Type
SCI
On-chip Adc
8-chx8-bit
Number Of Timers
4
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 6 ROM
Table 6.17 Flash Memory DC Characteristics
V
V
T
Item
High voltage (12 V)
application criterion
level *
FV
Note:
Rev. 6.00 Sep 12, 2006 page 164 of 526
REJ09B0326-0600
a
CC =
PP
= –20°C to +75°C (regular specifications), T
PP
= 12.0 V ±0.6 V
current
3.0 V to 5.5 V, AV
the 0 or 1 status of this bit. A byte data comparison is necessary to check whether 12V is
being applied. The relevant coding is shown below.
* The high voltage application criterion level is as shown in the table above, but a setting
of 12.0 V ±0.6 V should be made in boot mode and when programming and erasing
flash memory.
LABEL1:
Sample program for detection of 12 V application to FV
mode)
FV
Read
Program
Erase
CC =
PP
, TEST
MOV.B
CMP.B
BEQ
3.0 V to 5.5 V, AV
.
.
.
.
.
Symbol
V
I
@H'FF80, R1L
#H'FF, R1L
LABEL1
PP
H
a
REF =
Min
V
= –40°C to +85°C (wide-range specifications)
CC
+ 2
3.0 V to AV
Typ
10
20
20
CC
Max
11.4
10
20
40
40
, V
SS
= AV
Unit
V
µA
mA
mA
mA
PP
(user
SS
Test Conditions
V
V
= 0 V,
PP
PP
= 2.7 to 5.5 V
= 12.6 V

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