UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 611
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UPD70F3714GC-8BS-A
Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet
1.UPD70F3713GC-8BS-A.pdf
(674 pages)
Specifications of UPD70F3714GC-8BS-A
Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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18.3 Functional Overview
memory programmer, regardless of whether the V850ES/IE2 has already been mounted on the target system or not
(on-board/off-board programming).
supported, so that the program cannot be changed by an unauthorized person.
where it is assumed that the program is changed after production/shipment of the target system. A boot swap function
(
is supported during self programming, so that the flash memory can be rewritten under various conditions, such as
while communicating with an external device.
μ
On-board programming
Off-board programming
Self programming
(
PD70F3714 only) that rewrites the entire flash memory area safely is also supported. In addition, interrupt servicing
μ
The internal flash memory of the V850ES/IE2 can be rewritten by using the rewrite function of the dedicated flash
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming (
Remark
PD70F3714 only)
Rewrite Method
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash memory programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash memory programmer and a
dedicated program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of on-board/off-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance).
CHAPTER 18 FLASH MEMORY
Table 18-1. Rewrite Method
User’s Manual U17716EJ2V0UD
Functional Outline
μ
PD70F3714 only)) is ideal for an application
Flash memory
programming mode
Normal operation mode
Operation Mode
609
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