UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 651

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UPD70F3714GC-8BS-A

Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet

Specifications of UPD70F3714GC-8BS-A

Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Flash Memory Programming Characteristics
(T
(1) Basic characteristics
(2) Serial write operation characteristics
Operating frequency
Supply voltage
Rewrite time
Rewrite temperature
FLMD0, FLMD1 setup time
FLMD0 pulse input start time from
RESET↑
FLMD0 pulse width
FLMD0 pulse rise/fall time
A
Note When writing initially to shipped products, it is counted as one rewrite for both “erase to write” and “write
= −40 to +85°C, V
RESET
FLMD0
FLMD1
Example (P: Write, E: Erase)
only”.
V
DD
Parameter
Parameter
V
V
V
V
V
V
V
V
DD
DD
DD
DD
SS
SS
SS
SS
DD
Shipped product
Shipped product → E →P→E→P→E→P: 3 rewrites
= EV
DD
= 3.5 to 5.5 V, V
t
t
MDSET
t
CH
CHAPTER 19 ELECTRICAL SPECIFICATIONS
t
RFCF
R
<33>
Symbol
/t
/t
Symbol
C
CL
F
f
V
t
ERWR
PRG
CPU
DD
<33>
<34>
<35>
<36>
→P→E→P→E→P: 3 rewrites
User’s Manual U17716EJ2V0UD
SS
Note
<34>
= EV
Conditions
SS
Conditions
= 0 V, C
<35>
L
= 50 pF)
<35>
stabilization
30560/f
oscillation
MIN.
time
10
2
X
MIN.
−40
2.5
3.5
+
<36>
TYP.
100
TYP.
<36>
MAX.
MAX.
100
3000
5.5
20
85
50
Times
MHz
Unit
°C
V
Unit
ns
μ
ns
s
s
649

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