UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 630

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UPD70F3714GC-8BS-A

Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet

Specifications of UPD70F3714GC-8BS-A

Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
18.5.2 Features
628
(1) Secure self programming (boot swap function) (
(2) Interrupt support
The
with the physical memory of blocks 2 and 3. By writing the start program to be rewritten to blocks 2 and 3 in
advance and then swapping the physical memory, the entire area can be safely rewritten even if a power
failure occurs during rewriting because the correct user program always exists in blocks 0 and 1.
Instructions cannot be fetched from the flash memory during self programming. Conventionally, therefore, a
user handler written to the flash memory could not be used even if an interrupt occurred. With the V850ES/IE2,
a user handler can be registered to an entry RAM area by using a library function, so that interrupt servicing
can be performed by internal RAM or external memory execution.
μ
PD70F3714 supports a boot swap function that can exchange the physical memory of blocks 0 and 1
Block
Block
Block
Block
3
2
1
0
Figure 18-16. Rewriting Entire Memory Area (Boot Swap)
Rewriting blocks
2 and 3
CHAPTER 18 FLASH MEMORY
User’s Manual U17716EJ2V0UD
Block
Block
Block
Block
μ
3
2
1
0
PD70F3714 only)
Boot swap
Block
Block
Block
Block
3
2
1
0

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