UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 614
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UPD70F3714GC-8BS-A
Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet
1.UPD70F3713GC-8BS-A.pdf
(674 pages)
Specifications of UPD70F3714GC-8BS-A
Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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612
(1) Security setting by PG-FP4 and PG-FP5 (Security flag settings)
Notes 1. Set “Supply voltage”, “Program download/upload”, and “Command options” in broken lines in
When disabling the read command (Disable Read), to raise the security level, it is recommended to also
disable the block erase command (Disable Block Erase) and program command (Disable Program).
Furthermore, when rewriting program is not necessary similarly to the mask ROM versions, additionally disable
the chip erase command (Disable Chip Erase).
2. To disable rewriting the boot area (Boot block cluster setting), select “Disable Boot block cluster
accordance with the use conditions.
reprogramming” in “Security flag settings” and select the last block of the boot area for which rewriting
is to be disabled.
CHAPTER 18 FLASH MEMORY
User’s Manual U17716EJ2V0UD
Note 1
Note 2
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