UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 632
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UPD70F3714GC-8BS-A
Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet
1.UPD70F3713GC-8BS-A.pdf
(674 pages)
Specifications of UPD70F3714GC-8BS-A
Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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18.5.4 Flash functions
18.5.5 Pin processing
630
(1) FLMD0 pin
Caution Make sure that the FLMD0 pin is at 0 V when reset is released.
The FLMD0 pin is used to set the operation mode when reset is released and to protect the flash memory from
being written during self rewriting. It is therefore necessary to keep the voltage applied to the FLMD0 pin at 0
V when reset is released and a normal operation is executed. It is also necessary to apply a voltage of EV
level to the FLMD0 pin during the self programming mode period via port control before the memory is
rewritten.
When self programming has been completed, the voltage on the FLMD0 pin must be returned to 0 V.
Note
Remark
FlashEnv
FlashBlockErase
FlashWordWrite
FlashBlockIVerify
FlashBlockBlankCheck
FlashFLMDCheck
FlashGetInfo
FlashSetInfo
FlashBootSwap
FlashWordRead
μ
Function Name
PD70F3714 only
For details, refer to the V850 Series Flash Memory Self Programming (Single
Power Supply Flash Memory) User’s Manual.
Contact an NEC Electronics sales representative for the above manual.
Note
RESET signal
FLMD0 pin
Figure 18-18. Mode Change Timing
Table 18-10. Flash Function List
Initialization of flash control macro
Erasure of only specified one block
Writing from specified address
Internal verification of specified block
Blank check of specified block
Check of FLMD pin
Reading of flash information
Setting of flash information
Swapping of boot area
Reading data from specified address
EV
EV
CHAPTER 18 FLASH MEMORY
0 V
0 V
DD
DD
User’s Manual U17716EJ2V0UD
operation mode
Normal
Self programming mode
Outline
operation mode
Normal
Support
√
√
√
√
√
√
√
√
√
√
DD
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