ST52F513G3M6 STMicroelectronics, ST52F513G3M6 Datasheet - Page 120

• Manufacturer Part Number: ST52F513G3M6
• Manufacturer: STMicroelectronics

Specifications of ST52F513G3M6

• Cpu Family: ST52
• Device Core Size: 8b
• Frequency (max): 20MHz
• Interface Type: I2C/SCI/SPI
• Program Memory Type: Flash
• Program Memory Size: 8KB
• Total Internal Ram Size: 256Byte
• # I/os (max): 22
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

ST52510xx ST52513xx
16.12 EMC Characteristics
Susceptibility tests are performed on a sample
basis during product characterization.
16.12.1 Functional EMS . (Electro
Susceptibility)
Based on a simple running application on the
product (toggling two LEDs through I/O ports), the
product is stressed by two electromagnetic events
until a failure occurs (indicated by the LEDs).
Notes:
1. Data based on characterization results, not tested in production.
2. It is suggested to insert decoupling capacitors (10 nF and 100 nF electrolytic) on the power supply lines
16.12.2 Absolute Electrical Sensitivity. Based
on three different tests (ESD, LU and DLU) using
specific measurement methods, the product is
stressed in order to determine its performance in
terms of electrical sensitivity.
Figure 16.9 Typical Equivalent ESD Circuits
120/136
Symbol
V
to obtain a good price vs. EMC performance tradeoff. They have to be put as close as possible to the
device power supply pins.
V
V
Symbol
ESD(HBM)
FESD
FFTB
Voltage limits to be applied on any I/O
pin to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Electro-static discharge voltage
(Human Body Model)
HIGH VOLTAGE
GENERATOR
Parameter
PULSE
Parameter
DD
and V
Magnetic
S1
C
SS
L
= 100 pF
R = 1500
HUMAN BODY MODEL
V
V
DD
DD
■
■
A device reset allows normal operation to be
resumed.
16.12.3 Electro-Static Discharge (ESD).
Electro-Static Discharges (3 positive then 3 nega-
tive pulses separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends of the
number of supply pins of the device (3 parts*(n+1)
supply pin). The model simulated is the Human
Body Model. This test conforms to the JESD22-
A114A/A115A standard. See
=5 V,
=5 V,
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A burst of Fast Transient Voltage (positive
and negative) is applied to V
a 100 pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
Conditions
conform with IEC 1000-4-2
conform with IEC 1000-4-4
T
ST FIVE
A
T
T
=25 C
A
A
=25 C
=25 C
Conditions
, f
, f
osc
osc
= 8 MHz SDIP32
= 8 MHz SDIP32
Maximum value
S2
Figure
DD
2
HIGH VOLTAGE
GENERATOR
and V
PULSE
16.9.
Level/Class
1)
SS
2B
3B
through
Unit
kV