LFEBS12UB Freescale Semiconductor, LFEBS12UB Datasheet - Page 895

• Manufacturer Part Number: LFEBS12UB
• Description: KIT STUDENT LEARNING S12 DG128
• Manufacturer: Freescale Semiconductor

Specifications of LFEBS12UB

• Architecture: 8/16-bit
• Code Gen Tools Included: Code Warrior
• Silicon Manufacturer: Freescale
• Core Architecture: S12
• Core Sub-architecture: S12
• Silicon Core Number: MC9S12
• Silicon Family Name: S12D
• Kit Contents: HCS12 DG128 Learning Kit
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
EEE (Emulated EEPROM) — A method to emulate the small sector size features and endurance
characteristics associated with an EEPROM.
EEE IFR — Nonvolatile information register located in the D-Flash block that contains data required to
partition the D-Flash memory and buffer RAM for EEE. The EEE IFR is visible in the global memory map
by setting the EEEIFRON bit in the MMCCTL1 register.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
25.1.2
25.1.2.1
25.1.2.2
Freescale Semiconductor
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256 Kbytes of P-Flash memory composed of two 128 Kbyte Flash blocks. The 128 Kbyte Flash
blocks are each divided into 128 sectors of 1024 bytes.
Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to program up to one phrase in each P-Flash block simultaneously
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
Up to 32 Kbytes of D-Flash memory with 256 byte sectors for user access
Dedicated commands to control access to the D-Flash memory over EEE operation
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Ability to program up to four words in a burst sequence
Features
P-Flash Features
D-Flash Features
MC9S12XE-Family Reference Manual , Rev. 1.23
Chapter 25 256 KByte Flash Module (S12XFTM256K2V1)
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