UPD70F3201YGC-YEU-A Renesas Electronics America, UPD70F3201YGC-YEU-A Datasheet - Page 484

• Manufacturer Part Number: UPD70F3201YGC-YEU-A
• Description: MCU 32BIT I2C 100TQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Sx2r

Specifications of UPD70F3201YGC-YEU-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 68
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 2.2 V ~ 2.7 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

21.2 Functional Overview
the dedicated flash programmer (on-board/off-board programming), regardless of whether or not the V850ES/SA2 or
V850ES/SA3 has been mounted in the target system. The V850ES/SA2 and V850ES/SA3 support a security function
that prohibits rewriting user programs written to the on-chip flash memory, thus protecting the program from being
modified by unauthorized parties.
program modifications after manufacturing and shipment of the target system, enabling rewriting under any conditions
because interrupt servicing during self programming is supported.
482
On-board
programming
Off-board
programming
Self programming
mode
Block erase
Chip erase
Writing
Verify/checksum
Blank check
Security setting
The on-chip flash memory of the V850ES/SA2 and V850ES/SA3 can be rewritten using the rewriting functions of
The user-program based rewrite function (self programming) is a rewrite method suited to applications that assume
Note Instruction fetch and data access is not possible from the on-board flash memory area during self
Remark
Notes 1. Reading is possible by user program.
Rewrite Method
Function
2. The values set by on-board/off-board programming can only be retained.
programming, so the program for rewriting the internal RAM or external memory must have been transferred
and executed beforehand.
The FA Series is a product of Naito Densei Machida Mfg. Co., Ltd.
Contents of specified block in memory are erased.
All contents in memory are erased at once.
Writing to specified addresses and verify check are
executed.
Data read from flash memory and data transferred
from flash programmer are compared.
Erasure status of entire memory is checked.
Use of block erase command/chip erase
command/program command is disabled
Rewriting flash memory is possible by using the dedicated flash programmer after
the V850ES/SA2 or V850ES/SA3 has been mounted on the target system
Rewriting flash memory is possible by using the dedicated flash programmer and
dedicated program adapter board (such as the FA Series) before the V850ES/SA2
or V850ES/SA3 is mounted on the target system.
Rewriting flash memory is possible
in the flash memory via on-board/off-board programming.
Description
CHAPTER 21 FLASH MEMORY
Table 21-1. Rewrite Methods
Table 21-2. Basic Functions
User’s Manual U15905EJ2V1UD
Note
.
Function
by executing a user program already written
On-Board/Off-Board
Programming
( : Supported/×: Not Supported)
Support
Self Programming
×
×
×
Note 1
Note 2
Flash memory
programming
mode
Normal operation
mode
Operating Mode