s3c2410a Samsung Semiconductor, Inc., s3c2410a Datasheet - Page 522

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s3c2410a

Manufacturer Part Number
s3c2410a
Description
16/32-bit Risc Arm Microprocessor
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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ELECTRICAL DATA
(V
(V
24-36
SPI MOSI Master Output Delay time
SPI MOSI Slave Input Setup time
SPI MOSI Slave Input Hold time
SPI MISO Slave output Delay time
SPI MISO Master Input Setup time
SPI MISO Master Input Hold time
Supply Current
Suspend Device
Leakage Current
Hi-Z state Input Leakage
Input Levels
Differential Input Sensitivity
Differential Common Mode
Range
Single Ended Receiver
Threshold
Output Levels
Static Output Low
Static Output High
Capacitance
Transceiver Capacitance
DD
DD
= 1.8V
= 1.8V
Parameter
0.15 / 2.0 V
0.15 / 2.0 V
Parameter
Table 24-15. SPI Interface Transmit/Receive Timing Constants
0.1 V, T
0.1 V, T
Symbol
Table 24-16. USB Electrical Specifications
ICCS
A
A
VCM
VOH
VSE
VOL
ILO
VDI
CIN
= -40 to 85 C, V
= -40 to 85 C, V
0V < VIN < 3.3V
| (D+) – (D-) |
Includes VDI range
RL of 1.5Kohm to 3.6V
RL of 15Kohm to GND
Pin to GND
Symbol
t
t
t
t
SPIMOD
t
t
SPISOD
SPIMIS
SPIMIH
SPISIS
SPISIH
EXT
EXT
Condition
= 3.3V
= 3.3V
0.3V)
0.3V)
Min
1.0
0.1
0.8
8.2
5.6
0.1
Typ.
Min
-10
0.2
0.8
0.8
2.8
21.4 / 20.4
14.7 / 13.7
Max
Max
2.5
2.0
0.3
3.6
10
10
20
4.2
0.1
1.8
0.1
S3C2410A
Unit
Unit
µA
µA
pF
V
V
ns
ns
ns
ns
ns
ns

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