MC68HC708AS48 FREESCALE [Freescale Semiconductor, Inc], MC68HC708AS48 Datasheet - Page 68



Manufacturer Part Number
Advance Information
FREESCALE [Freescale Semiconductor, Inc]
Electrically Erasable Programmable ROM
6.2 Introduction
This section describes the 640 bytes of electrically erasable
programmable ROM (EEPROM).
6.3 Features
6.4 Functional Description
Addresses $0800–$0A7F are EEPROM locations. 640 bytes of
EEPROM can be programmed or erased without an external voltage
supply. The EEPROM has a lifetime of 10,000 write-erase cycles in the
non-redundant mode. Reliability (data retention) is further extended if
the redundancy option is selected. EEPROM cells are protected with a
non-volatile, 128-byte, block protection option. These options are stored
in the EEPROM non-volatile register (EENVR) and are loaded into the
EEPROM array configuration register (EEACR) after reset or a read of
EENVR. The EEPROM array can also be disabled to reduce current.
6.4.1 EEPROM Programming
The unprogrammed state is a logic 1. Programming changes the state
to a logic 0. Only valid EEPROM bytes in the non-protected blocks and
EENVR can be programmed. When the array is configured in the
redundant mode, programming the first 128 bytes ($0800–$087F) will
also program the last 128 bytes ($0A00–$0A7F) with the same data.
Programming the EEPROM in the non-redundant mode is
recommended. Program the data to both locations before entering the
redundant mode.
Advance Information
Electrically Erasable Programmable ROM (EEPROM)
Byte, block, or bulk erasable
Non-volatile redundant array option
Non-volatile block protection option
Non-volatile MCU configuration bits
On-chip charge pump for programming/erasing
Rev. 4.0

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