MC68HC708AS48

Manufacturer Part NumberMC68HC708AS48
DescriptionAdvance Information
ManufacturerFREESCALE [Freescale Semiconductor, Inc]
MC68HC708AS48 datasheet
 


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Page 69/396

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PrevNext
Follow this procedure to program a byte of EEPROM. Refer to
Control Timing
1. Clear EERAS1 and EERAS0 and set EELAT in the EECR
2. Write the desired data to any user EEPROM address.
3. Set the EEPGM bit. (See Note c.)
4. Wait for a time, t
5. Clear the EEPGM bit.
6. Wait for the programming voltage time to fall, t
7. Clear EELAT bits. (See Note d.)
8. Repeat steps 1 through 7 for more EEPROM programming.
NOTES:
MC68HC708AS48
Rev. 4.0
MOTOROLA
Electrically Erasable Programmable ROM (EEPROM)
Electrically Erasable Programmable ROM (EEPROM)
for timing values.
($FE1D). Set value of t
EEPGM
, to program the byte.
EEPGM
a. EERAS1 and EERAS0 must be cleared for programming.
Otherwise, you will be in erase mode.
b. Setting the EELAT bit configures the address and data buses
to latch data for programming the array. Only data with a valid
EEPROM address will be latched. If another consecutive valid
EEPROM write occurs, this address and data will override the
previous address and data. Any attempts to read other
EEPROM data will read the latched data. If EELAT is set,
other writes to the EECR will be allowed after a valid
EEPROM write.
c. The EEPGM bit cannot be set if the EELAT bit is cleared and
a non-EEPROM write has occurred. This is to ensure proper
programming sequence. When EEPGM is set, the on-board
charge pump generates the program voltage and applies it to
the user EEPROM array. When the EEPGM bit is cleared, the
program voltage is removed from the array and the internal
charge pump is turned off.
d. Any attempt to clear both EEPGM and EELAT bits with a
single instruction will clear only EEPGM to allow time for
removal of high voltage from the EEPROM array.
Functional Description
. (See Notes a and b.)
.
EEFPV
Advance Information
21.6
69