MC68HC708AS48 FREESCALE [Freescale Semiconductor, Inc], MC68HC708AS48 Datasheet - Page 70

• Manufacturer Part Number: MC68HC708AS48
• Description: Advance Information
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Electrically Erasable Programmable ROM
6.4.2 EEPROM Erasing
Advance Information
70
The unprogrammed state is a logic 1. Only the valid EEPROM bytes in
the non-protected blocks and EENVR can be erased. When the array is
configured in the redundant mode, erasing the first 128 bytes
($0800–$087F) will also erase the last 128 bytes ($0A00–$0A7F).
Follow this procedure to erase EEPROM. Refer to
for timing values.
EEBPx bit must be cleared to erase EEPROM data in the corresponding
block. If any EEBPx is set, the corresponding block cannot be erased
and bulk erase mode does not apply.
Electrically Erasable Programmable ROM (EEPROM)
1. Clear/set EERAS1 and EERAS0 to select byte/block/bulk erase,
2. Write any data to the desired address for byte erase, to any
3. Set the EEPGM bit. (See Note b.)
4. Wait for a time, t
5. Clear EEPGM bit.
6. Wait for the erasing voltage time to fall, t
7. Clear EELAT bits. (See Note c.)
8. Repeat steps 1 through 7 for more EEPROM byte/block erasing.
NOTES:
and set EELAT in EECTL. Set value of t
(See Note a.)
address in the desired block for block erase, or to any array
address for bulk erase.
a. Setting the EELAT bit configures the address and data buses
to latch data for erasing the array. Only valid EEPROM
addresses with their data will be latched. If another
consecutive valid EEPROM write occurs, this address and
data will override the previous address and data. In block
erase mode, any EEPROM address in the block can be used
in step 2. All locations within this block will be erased. In bulk
erase mode, any EEPROM address can be used to erase the
whole EEPROM. EENVR is not affected with block or bulk
EEPGM
, to program the byte.
EEBYT
MC68HC708AS48
EEFPV
21.6 Control Timing
/t
).
EEBLOCK
MOTOROLA
/t
—
EEBULK
Rev. 4.0
.