MPC8543VTANGA Freescale Semiconductor, MPC8543VTANGA Datasheet - Page 21

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MPC8543VTANGA

Manufacturer Part Number
MPC8543VTANGA
Description
Microprocessors - MPU PQ3 8543
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MPC8543VTANGA

Product Category
Microprocessors - MPU
Rohs
yes
Processor Series
PowerQUICC III
Data Bus Width
32 bit
Maximum Clock Frequency
800 MHz
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Package / Case
BGA
I/o Voltage
1.8 V, 2.5 V, 3.3 V
Minimum Operating Temperature
0 C
Table 13
GV
Table 14
This table provides the current draw characteristics for MV
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
1. This parameter is sampled. GV
Current draw for MV
Note:
1. The voltage regulator for MV
noise on MV
equal to MV
DD
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM V
is expected to be equal to 0.5  GV
provides the recommended operating conditions for the DDR SDRAM controller when
provides the DDR I/O capacitance when GV
Parameter/Condition
REF
REF
Parameter/Condition
. This rail must track variations in the DC level of MV
Table 13. DDR SDRAM DC Electrical Characteristics for GV
Parameter/Condition
MPC8548E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 9
may not exceed ±2% of the DC value.
REF
OUT
OUT
.
= 0.35 V)
= 1.95 V)
Table 14. DDR SDRAM Capacitance for GV
REF
Table 15. Current Draw Characteristics for MV
DD
must be able to supply up to 500 A current.
= 2.5 V ± 0.125 V, f = 1 MHz, T
DD
, and to track GV
Symbol
MV
GV
V
V
I
I
V
I
OH
OZ
OL
TT
REF
IH
IL
DD
DD
at all times.
V
Symbol
I
Symbol
OUT
MVREF
DD
MV
MV
DD
0.49  GV
C
C
DIO
(typ) = 2.5 V.
IO
REF
DC variations as measured at the receiver. Peak-to-peak
REF
A

2.375
–16.2
–0.3
16.2
Min
–50
= 25°C, V
GV
REF
REF
– 0.04
+ 0.15
DD
.
.
DD
.
DD
OUT
Min
Min
6
(typ) = 2.5 V
= GV
MV
MV
0.51  GV
GV
REF
DD
DD
REF
REF
2.625
DD
Max
(typ) = 2.5 V
50
/2, V
+ 0.04
+ 0.3
– 0.15
Max
Max
500
0.5
8
OUT
DD
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
Unit
mA
mA
A
A
pF
pF
V
V
V
V
V
Notes
Notes
Notes
1
2
3
4
1
1
1
21

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