HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 588

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HD6412340

Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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Notes: 1.
17.9.1
Follow the procedure shown in the program/program-verify flowchart in figure 17.21 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
The wait times (x, y, z, , ß,
and 2 (FLMCR1, FLMCR2) and the maximum number of programming operations (N) are shown
in table 22.10 in section 20.1.6, Flash Memory Characteristics.
Following the elapse of (x) s or more after the SWE bit is set to 1 in FLMCR1, 32-byte program
data is stored in the program data area and reprogram data area, and the 32-byte data in the
576
Software overwrite disabled
FWE = 1
programming mode
Figure 17.20 Mode Transitions Using Settings of Bits in FLMCR1 and FLMCR2
2. Do not make transitions by setting or clearing multiple bits simultaneously.
3. After changing from erase mode to erase setup status, do not change back to erase mode except
4. After changing from program mode to program setup status, do not change back to program mode
User mode
On-board
Program Mode
via software overwrite enable status.
except via software overwrite enable status.
status
FWE = 0
: user mode,
*1
SWE = 1
SWE = 0
: on-board programming mode
overwrite enabled
after bits are set or cleared in flash memory control registers 1
*2
Software
status
ESU = 1
PV = 0
PSU = 0
EV = 1
PSU = 1
EV = 0
ESU = 0
PV = 1
Program setup
Program verify
Erase setup
Erase verify
status
mode
status
mode
*3
*4
E = 1
E = 0
P = 1
P = 0
Erase mode
Program
mode

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