HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 614

• Manufacturer Part Number: HD6412340
• Description: H8S/2345 F-ZTAT Hardware Manual
• Manufacturer: HITACHI [Hitachi Semiconductor]

17.13.9 Writer Mode Transition Time
Commands cannot be accepted during the oscillation stabilization period or the writer mode setup
period. After the writer mode setup time, a transition is made to memory read mode.
Table 17.31 Command Wait State Transition Time Specifications
Item
Standby release (oscillation
stabilization time)
Writer mode setup time
V
17.13.10 Notes On Memory Programming
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
602
VCC
RES
FWE
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
CC
Figure 17.34 Oscillation Stabilization Time, Writer Mode Setup Time, and Power Supply
When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming. (See figure 17.35.)
When performing programming using writer mode on a chip that has been programmed/erased
in an on-board programming mode, auto-erasing is recommended before carrying out auto-
programming.
hold time
2. Auto-programming in the writer mode should be performed only once for each 128-
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
byte write unit block.
It is not possible to write additional data to a 128-byte write unit block that has already
been programmed. To reprogram a block, first use the auto-erase mode and then use
the auto-program mode.
t
osc1
t
bmv
Memory read
mode
Command wait
state
Symbol
t
t
t
osc1
bmv
dwn
Auto-program mode
Auto-erase mode
Fall Sequence
Min
10
10
0
Max
—
—
—
Unit
ms
ms
ms
Command
wait state
Normal/
abnormal end
identification
Notes
Don't care
Don't care
t
dwn