HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 657

• Manufacturer Part Number: HD6412340
• Description: H8S/2345 F-ZTAT Hardware Manual
• Manufacturer: HITACHI [Hitachi Semiconductor]

20.1.6
Table 20.10 lists the flash memory characteristics.
Table 20.10 Flash Memory Characteristics (1)
Conditions: V
Item
Programming time *
Erase time *
Number of programmings
Programming Wait time after setting SWE bit *
Erase
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
648
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase
4. Write time maximum value (t
Flash Memory Characteristics
1,
control register (FLMCR1) is set. The program verification time is not included.)
verification time is not included.)
number of programmings (N)).
*
3,
T
regular specifications) T
temperature range; wide-range specifications)
Wait time after setting PSU bit *
Wait time after setting P bit *
Wait time after clearing P bit *
Wait time after clearing PSU bit *
Wait time after setting PV bit *
Wait time after H'FF dummy write *
Wait time after clearing PV bit *
Max. number of programmings *
Wait time after setting SWE bit *
Wait time after setting ESU bit *
Wait time after setting E bit *
Wait time after clearing E bit *
Wait time after clearing ESU bit *
Wait time after setting EV bit *
Wait time after H'FF dummy write *
Wait time after clearing EV bit *
Max. number of erases *
*
a
5
CC
= 0 to +75 C (flash memory programming/erase operating temperature range;
1,
= AV
*
2,
*
4
CC
= 4.5 to 5.5 V, V
1,
*
5
a
1,
1,
= 0 to +85 C (flash memory programming/erase operating
1
1
1
1
P
*
*
1
1
4
6
1
1
(max.) = wait time after P bit setting (z) maximum
1
1
1,
1
1
SS
*
1
1
4
= AV
Symbol
t
t
N
x
y
z
N
x
y
z
N
P
E
WEC
SS
= 0 V,
Min
—
—
—
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
120
Typ
10
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
200
1200
100
—
—
200
—
—
—
—
—
1000*
—
—
10
—
—
—
—
—
240
5
Unit
ms/
32 bytes
ms/block
Times
Times
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
Test
Conditions
z = 200 s