R8A77850ANBGV Renesas Electronics America, R8A77850ANBGV Datasheet - Page 1405
R8A77850ANBGV
Manufacturer Part Number
R8A77850ANBGV
Description
IC SUPERH MPU ROMLESS 436-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet
1.R8A77850AADBGV.pdf
(1694 pages)
Specifications of R8A77850ANBGV
Core Processor
SH-4A
Core Size
32-Bit
Speed
600MHz
Connectivity
Audio Codec, MMC, Serial Sound, SCI, SIO, SPI, SSI
Peripherals
DMA, POR, WDT
Number Of I /o
108
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1 V ~ 1.2 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
436-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R8A77850ANBGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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27.5
The examples of setting and starting registers in each access mode are shown below.
Example of Register Setting
Figure 27.11 NAND Command Access (Block Erase)
Common control register (FLCMNCR)
ACM[1:0] = B'00 (command access mode)
CE0 = B'1 (enable the chip)
TYPESEL = B'1 (select NAND-type flash memory)
Command control register (FLCMDCR)
DOCMD1 = B'1 (execute first command stage)
DOCMD2 = B'1 (execute second command stage)
DOADR = B'1 (execute address stage)
ADRMD = B'1 (address register value is output as
memory address)
ADRCNT[1:0] = B'01 (issue 2-byte address)
DOSR = B'1 (perform status read)
Command code register (FLCMCDR)
CMD[7:0] = H'60 (block erase command)
CMD[15:8] = H'D0 (block erase execute command)
Address register (FLADR)
Set erase addresses to ADR[7:0] and ADR[15:8]
Transfer control register (FLTRCR)
TRSTRT = B'1 (start flash memory access)
Perform block erase of flash memory
Issue first command
Issue address
Issue second command
Read status
Set TRSTRT = B'1 (start flash memory access)
End of flash memory access
FLTRCR.TREND = B'0 (clear processing end flag)
Read status
Check FLBSYCNT.STAT[7:0]
End of command access (block erase)
Start of command access (block erase)
FLTRCR.TREND = B'1?
Yes
27. NAND Flash Memory Controller (FLCTL)
Rev.1.00 Jan. 10, 2008 Page 1373 of 1658
No
REJ09B0261-0100
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