R8A77850ANBGV Renesas Electronics America, R8A77850ANBGV Datasheet - Page 578
R8A77850ANBGV
Manufacturer Part Number
R8A77850ANBGV
Description
IC SUPERH MPU ROMLESS 436-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet
1.R8A77850AADBGV.pdf
(1694 pages)
Specifications of R8A77850ANBGV
Core Processor
SH-4A
Core Size
32-Bit
Speed
600MHz
Connectivity
Audio Codec, MMC, Serial Sound, SCI, SIO, SPI, SSI
Peripherals
DMA, POR, WDT
Number Of I /o
108
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1 V ~ 1.2 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
436-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R8A77850ANBGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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12. DDR2-SDRAM Interface (DBSC2)
12.5.10 DDR2-SDRAM Power Supply Backup Function
The SDRAM power supply backup function utilizes the SDRAM self-refresh state to turn off the
power supply to most of the modules including the DBSC2 (all modules except the 1.8 V I/O),
while maintaining the data in the SDRAM. By using this function, not only is it possible to cut
power consumption, but the time needed to transfer data once again to the SDRAM can be
eliminated, since the valid data is maintained within the SDRAM (see figure 12.23). In order to
realize this function, in addition to the LSI device containing the DBSC2, a separate external
control circuit (microcomputer or similar) is needed to monitor the states of this LSI and the
memory.
Rev.1.00 Jan. 10, 2008 Page 546 of 1658
REJ09B0261-0100
Figure 12.22 Important Information on One-Cycle Extension of ODT Control Signal
MCK
MCKE
Command
Data
MODT
Terminating
resistor
in SDRAM
The above figure shows an example when a product with CL = 5 is used. As the ODT control signal (MODT)
is extended for one cycle, the product with CL = 5 or greater is required. If a product with CL = 4 or less is
used, MODT needs to be asserted before the issue of the WRITE command, which is not supported by this
LSI.
The interval between the READ and WRITE commands required for the SDRAM is assumed to be 4 cycles.
However, if the interval is 4 cycles, read data exists on the data bus when the terminating resistor in the
SDRAM is turned on since MODT is extended for one cycle. To prevent this, the interval should be set to 5
cycles.
If the interval from the READ command to the WRITE command is 4 cycles, read data exists
on the data bus when Rtt is turned on. Therefore, the interval should be 5 cycles.
read
Extended for 1 cycle
5 cycles for
product with CL = 5
4 -> 5 cycles
write
tAOND
= 2 cycles
4 cycles for
product with CL = 5
High level
Resistor ON
tAOFD
= 2.5 cycles
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