cs5535 National Semiconductor Corporation, cs5535 Datasheet - Page 552

• Manufacturer Part Number: cs5535
• Description: Geode Cs5535 Companion Multi-function South Bridge
• Manufacturer: National Semiconductor Corporation

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Electrical Specifications
6.5
The LVD electrical parameters are defined in Figure 6-11
and listed in Table 6-24. Use of internal signals
power_good_standby and power_good_working is illus-
trated in Figure 3-6 "Reset Logic" on page 59.
Note 1. The resulting circuit has high noise immunity. Any glitches less than 150 ns are rejected. Hysteresis is guaranteed
Signal
power_good_standby
power_good_working
Note 3:
V = V
V = V
V = 0
LOW VOLTAGE DETECT (LVD) PARAMETERS
by design.
OPERATING
RAISING_TRIP
power_good ~= V
Parameter
V
V
V
V
V
V
V
V
V
RASING_TRIP_CORE_VSB
FALLING_TRIP_CORE_VSB
HYSTERESIS_CORE_VSB
RASING_TRIP_IO_VSB
FALLING_TRIP_IO_VSB
HYSTERESIS_IO_VSB
RASING_TRIP_CORE
FALLING_TRIP_CORE
HYSTERESIS_CORE
Figure 6-11. LVD Electrical Parameter Definitions
(Continued)
SS
Table 6-24. LVD Parameters
power_good ~=
V
0.90
0.72
2.15
2.32
0.90
0.72
CORE_VSB
Min
100
23
23
552
In this subsection, unless otherwise noted:
• All timing specifications are specified under the oper-
• The LVD circuit incorporates no clock signals.
ating conditions listed in Table 6-3 on page 526 (i.e.,
V
(VDDIO) and V
CORE
Max
1.00
0.90
2.85
2.80
1.00
0.90
110
580
110
(VDD) and V
Units
mV
mV
mV
IO_VSB
V
V
V
V
V
V
CORE_VSB
Comment/Condition
Note 1.
Note 1.
Note 1.
(VDDIO_VSB) = All; T
V = V
FALLING_TRIP
(VDD_VSB) = All; V
V = 0
CASE
Revision 0.8
= All).
IO