HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 802

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 20 Flash Memory (F-ZTAT Version)
20.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 20.12 should be
followed.
1. Prewriting (setting erase block data to all 0) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E1 bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 1 bit
5.
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REJ09B0054-0600
register 1 and 2 (EBR1 and EBR2). To erase multiple blocks, each block must be erased in
turn.
Set a value greater than (t
are B'0. Verify data can be read in words from the address to which a dummy write was
performed.
If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-
verify sequence as before. The maximum number of repetitions of the erase/erase-verify
sequence is (N).
Erase/Erase-Verify
sesu
+ t
se
+ t
ce
+ t
cesu
) ms as the WDT overflow period.