HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 808

MCU 3V 384K I-TEMP 100-TQFP

HD64F2239TF20I

Manufacturer Part Number
HD64F2239TF20I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of HD64F2239TF20I

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2239TF20I
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory (F-ZTAT Version)
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering On and Off (See Figures 20.14 to 20.16): Do not apply a high level to the FWE pin
until VCC has stabilized. Also, drive the FWE pin low before turning off VCC.
When applying or disconnecting VCC power, fix the FWE pin low and place the flash memory in
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
FWE Application/Disconnection (See Figures 20.14 to 20.16): FWE application should be
carried out when MCU operation is in a stable condition. If MCU operation is not stable, fix the
FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to prevent
unintentional programming or erasing of flash memory:
• Apply FWE when the VCC voltage has stabilized within its rated voltage range.
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of the
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits in FLMCR1
Do Not Apply a Constant High Level to the FWE Pin: Apply a high level to the FWE pin only
when programming or erasing flash memory. A system configuration in which a high level is
constantly applied to the FWE pin should be avoided. Also, while a high level is applied to the
FWE pin, the watchdog timer should be activated to prevent overprogramming or overerasing due
to program runaway, etc.
Use the Recommended Algorithm when Programming and Erasing Flash Memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P1 or E1 bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
Rev. 6.00 Mar. 18, 2010 Page 746 of 982
REJ09B0054-0600
reset state. FWE input can also be switched during execution of a program in flash memory.
are cleared.
Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits are not set by mistake
when applying or disconnecting FWE.

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