HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 967
HD64F2239TF20I
Manufacturer Part Number
HD64F2239TF20I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2238RFA6V.pdf
(1048 pages)
Specifications of HD64F2239TF20I
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2239TF20I
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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27.4.6
Table 27.37 lists the flash memory characteristics.
Table 27.37 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Rewrite times
Data holding time *
Programming Wait time after SWE1 bit setting *
Erasing
Flash Memory Characteristics
1
*
3
*
V
regular specifications), T
range; wide-range specifications)
5
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clearing *
Wait time after PSU1 bit clearing *
Wait time after PV1 bit setting *
Wait time after H'FF dummy write *
Wait time after PV1 bit clearing *
Wait time after SWE1 bit clearing
Maximum number of programming
operations *
Wait time after SWE1 bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clearing *
Wait time after ESU1 bit clearing *
Wait time after EV1 bit setting *
Wait time after H'FF dummy write *
Wait time after EV1 bit clearing *
CC
SS
8
= AV
1
= 3.0 V to 5.5 V, AV
*
2
*
4
SS
1
*
= 0 V, T
4
a
= -20°C to +75°C (program/erase operating temperature range;
a
CC
= –20°C to +75°C (program/erase operating temperature
1
1
*
*
1
1
= 3.0 V to 5.5 V, V
1
1
4
5
1
1
1
1
1
1
1
1
1
1
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
N1
N2
P
E
DRP
sswe
spsu
sp10
sp30
sp200
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
WEC
Rev. 6.00 Mar. 18, 2010 Page 905 of 982
Min
⎯
⎯
100 *
10
1
50
8
28
198
5
5
4
2
2
100
1
100
10
10
10
20
2
4
⎯
⎯
ref
6
Section 27 Electrical Characteristics
= 3.0 V to AV
Typ
10
100
10000 *
⎯
1
50
10
30
200
5
5
4
2
2
100
1
100
10
10
10
20
2
4
⎯
⎯
7
Max
200
1200
⎯
⎯
⎯
⎯
12
32
202
⎯
⎯
⎯
⎯
⎯
⎯
6 *
994 *
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
4
4
CC
,
Unit
ms/
128 bytes
ms/block
Times
Years
μs
μs
µs
μs
μs
μs
μs
μs
μs
μs
µs
μs
μs
ms
μs
μs
μs
μs
μs
Times
REJ09B0054-0600
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
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