SW00ENB-ZCC Toshiba, SW00ENB-ZCC Datasheet - Page 435

• Manufacturer Part Number: SW00ENB-ZCC
• Description: MCU, MPU & DSP Development Tools CASEWORKS
• Manufacturer: Toshiba

Specifications of SW00ENB-ZCC

• Tool Type: Development Software Support
• Core Architecture: 870
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.7.12
3.7.13
Operation mode. The system can determine this status by using write status flags. To put the flash
memory back in Read mode, use the Read/Reset command to reset the flash memory or a hardware reset
to reset the whole chip. In case of an erase failure, it is recommended to replace the chip or discontinue
the use of the failing flash block. The failing block can be identified by means of the Auto Block Erase
command.
Auto Block Erase and Auto Multi-Block Erase Commands
the command sequence. A time-out begins from the rising edge of that
erase operation will commence. The embedded Auto Block Erase algorithm automatically preprograms
the selected block for an all-0 data pattern, and then erases and verifies that block for an all-1 data
pattern.
written. For more on this, see Figure 3.29.
Read mode. The block erase time-out period is 50 m. The time-out window is reset on each rising edge
of
3.28 on page 82).
terminates the block erase operation. The block erase operation that was interrupted should be re-
initiated once the flash memory is ready to accept another command sequence because data may be
corrupted.
erases the unprotected blocks and ignores the protected blocks. If all the selected blocks are protected,
the Auto Block Erase algorithm does nothing; the flash memory returns to Read in approximately 100
Operation mode. The system can determine this status by using write status flags. To put the flash
memory back in Read mode, use the Read/Reset command to reset the flash memory or a hardware reset
to reset the whole chip. In case of an erase failure, it is recommended to replace the chip or discontinue
the use of the failing flash block. If any failure occurred during the multi-block erase operation, the
failing block can be identified by running Auto Block Erase on each of the blocks selected for multi-
block erasure.
Block Protect Command
the program and erase commands on the protected blocks are summarized below.
m after the rising edge of
If any failure occurs during the erase operation, the flash memory remains locked in Embedded
The address of the block to be erased is latched on the falling edge of
During the time-out period, additional block addresses and Auto Block Erase commands may be
Any command other than Auto Block Erase during the time-out period resets the flash memory to
Any commands written during the block erase operation are ignored. A hardware reset immediately
The block protection feature disables erase operations in any block. The Auto Block Erase algorithm
If any failure occurs during the erase operation, the flash memory remains locked in Embedded
The block protection feature disables both program and erase operations in any block. The effects of
WE
. The system can determine the status of the erase operation by using write status flags (see Table
WE
in the final bus cycle of the command sequence.
TMP1940FDBF-77
WE
TMP1940FDBF
WE
pulse. After a time-out, the
in the sixth bus cycle of