ST10F276Z5T3 STMicroelectronics, ST10F276Z5T3 Datasheet - Page 186

• Manufacturer Part Number: ST10F276Z5T3
• Description: MCU 16BIT 832KBIT FLASH 144-TQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of ST10F276Z5T3

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 832KB (832K x 8)
• Program Memory Type: FLASH
• Ram Size: 68K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 144-TQFP, 144-VQFP
• Cpu Family: ST10
• Device Core Size: 16b
• Frequency (max): 40MHz
• Interface Type: CAN/I2C
• Total Internal Ram Size: 68KB
• # I/os (max): 111
• Number Of Timers - General Purpose: 5
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• On-chip Adc: 24-chx10-bit
• Instruction Set Architecture: CISC/RISC
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 144
• Package Type: LQFP
• Processor Series: ST10F27x
• Core: ST10
• Data Bus Width: 16 bit
• Data Ram Size: 68 KB
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 111
• Number Of Timers: 5
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• For Use With: 497-6399 - KIT DEV STARTER ST10F276Z5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Electrical characteristics
186/239
Table 93.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average value derived from a full sector
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the
4. Module Erase is obtained through a sequence of two Bank Erase operations (since each module is
5. Chip Erase is obtained through a sequence of two Module Erase operations on I- and X-Module.
6. Not 100% tested, guaranteed by design characterization
Table 94.
1. Two 64 Kbyte Flash Sectors may be typically used to emulate up to 4, 8 or 16 Kbytes of EEPROM.
Erase suspend latency
Erase suspend request
Rate
Set protection
.
Number of program / erase
programming time: Absolute value of a Word or Double Word Programming time could be longer than the
provided average value.
Bank).
composed by two Banks).
Therefore, in case of an emulation of a 16 Kbyte EEPROM, 100000 Flash Program / Erase cycles are
equivalent to 800000 EEPROM Program/Erase cycles.
For an efficient use of the Read While Write feature and/or EEPROM Emulation please refer to dedicated
Application Note document (AN2061 - EEPROM Emulation with ST10F2xx). Contact your local field
service, local sales person or STMicroelectronics representative to obtain a copy of such a guideline
document.
(-40 °C ≤ T
(6)
Parameter
100000
cycles
0 - 100
10000
Flash characteristics (continued)
Data retention characteristics
1000
(6)
A
≤ 125 °C)
(6)
0 cycles
T
A
Typical
= 25 °C
20
40
–
(1)
0 cycles
(code store)
832 Kbyte
> 20 years
170
(average ambient temperature 60 °C)
30
20
-
-
-
T
Maximum
A
(1)
= 125 °C
Data retention time
100k cycles
170
30
20
(EEPROM emulation)
Unit
ms
µs
µs
> 20 years
> 20 years
64 Kbyte
10 years
Min delay between
two requests
1 year
ST10F276Z5
Notes
(1)