h8s-2628 Renesas Electronics Corporation., h8s-2628 Datasheet - Page 630

• Manufacturer Part Number: h8s-2628
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

Section 23 Electrical Characteristics
23.5
Table 23.9 lists the flash memory characteristics.
Table 23.9 Flash Memory Characteristics
Conditions: V
Rev. 3.00 Oct 04, 2005 page 590 of 598
REJ09B0155-0300
Item
Programming time *
Erase time *
Reprogramming count
Programming
Erase
Flash Memory Characteristics
1
*
3
*
V
T
5
Wait time after SWE bit setting *
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clear *
Wait time after PSU1 bit clear *
Wait time after PV1 bit setting *
Wait time after H
Wait time after PV1 bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clear *
Wait time after ESU1 bit clear *
Wait time after EV1 bit setting *
Wait time after H
Wait time after EV1 bit clear *
Wait time after SWE bit clear *
Maximum erase count *
a
CC
SS
= 0 to +75°C (Programming/erasing operating temperature range)
1
= PLLV
= 4.5 V to 5.5 V, AV
*
2
*
4
SS
= AV
'
'
FF dummy write *
FF dummy write *
SS
1
*
= 0 V,
5
1
1
CC
1
1
1
1
1
1
*
*
1
1
1
1
1
4
5
= 4.5 V to 5.5 V,
1
1
*
1
1
4
1
1
Symbol Min
t
t
N
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
t
t
t
N
P
E
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
WEC
1
50
28
198
8
5
5
4
2
2
100
1
100
10
10
10
20
2
4
100
12
Typ
10
100
1
50
30
200
10
5
5
4
2
2
100
1
100
10
10
10
20
2
4
100
Max
200
1200
100
32
202
12
1000
100
120
128 bytes
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Unit
ms/
ms/block
Times
µs
µs
µs
Times
ms
Times
Test Condition
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time wait