XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 112

• Manufacturer Part Number: XC908AS60ACFU
• Description: MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
• Manufacturer: Motorola Semiconductor Products

EEPROM-2 Memory
7.5 Functional Description
7.5.1 EEPROM-2 Configuration
7.5.2 EEPROM-2 Timebase Requirements
Technical Data
112
The 512 bytes of EEPROM-2 are located at $0600-$07FF and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
The 8-bit EEPROM-2 Non-Volatile Register (EE2NVR) and the 16-bit
EEPROM-2 Timebase Divider Non-Volatile Register (EE2DIVNVR)
contain the default settings for the following EEPROM configurations:
EE2NVR and EE2DIVNVR are non-volatile EEPROM registers. They
are programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write volatile
registers define the EEPROM-2 configurations.
For EE2NVR, the corresponding volatile register is the EEPROM-2
Array Configuration Register (EE2ACR). For the EE2DIVNCR (two 8-bit
registers: EE2DIVHNVR and EE2DIVLNVR), the corresponding volatile
register is the EEPROM-2 Divider Register (EE2DIV: EE2DIVH and EE2
DIVL).
A 35µs timebase is required by the EEPROM-2 control circuit for
program and erase of EEPROM content. This timebase is derived from
dividing the CGMXCLK or bus clock (selected by EEDIVCLK bit in
CONFIG-2 Register) using a timebase divider circuit controlled by the
16-bit EEPROM-2 Timebase Divider EE2DIV Register (EE2DIVH and
EE2DIVL).
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EEPROM-2 Timebase Reference
EEPROM-2 Security Option
EEPROM-2 Block Protection
EEPROM-2 Memory
MC68HC908AZ60A — Rev 2.0
MOTOROLA