XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 72

• Manufacturer Part Number: XC908AS60ACFU
• Description: MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
• Manufacturer: Motorola Semiconductor Products

FLASH-1 Memory
4.7 FLASH-1 Page Erase Operation
Technical Data
72
NOTE:
within the FLASH array memory space such as the COP Control
Register (COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
Use this step-by-step procedure to erase a page (128 bytes) of FLASH-
1 memory to read as logic 1:
A. Programming and erasing of FLASH locations can not be performed
by code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address
within the FLASH array memory space such as the COP Control
Register (COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
10. Wait for a time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH-1 Control
2. Read the FLASH-1 Block Protect Register (FL1BPR).
3. Write any data to any FLASH-1 address within the address range
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Clear the ERASE bit.
8. Wait for time, t
9. Clear the HVEN bit.
Register (FL1CR).
of the page (128 byte block) to be erased.
normal read mode.
FLASH-1 Memory
NVS
ERASE
NVH
RCV
.
.
, after which the memory can be accessed in
.
MC68HC908AZ60A — Rev 2.0
MOTOROLA