XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 92
XC908AS60ACFU
Manufacturer Part Number
XC908AS60ACFU
Description
MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
Manufacturer
Motorola Semiconductor Products
Datasheet
1.XC908AS60ACFU.pdf
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EEPROM-1 Memory
6.5 Functional Description
6.5.1 EEPROM-1 Configuration
Technical Data
92
The 512 bytes of EEPROM-1 are located at $0800-$09FF and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
The 8-bit EEPROM-1 Non-Volatile Register (EE1NVR) and the 16-bit
EEPROM-1 Timebase Divider Non-Volatile Register (EE1DIVNVR)
contain the default settings for the following EEPROM configurations:
EE1NVR and EE1DIVNVR are non-volatile EEPROM registers. They
are programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write volatile
registers define the EEPROM-1 configurations.
For EE1NVR, the corresponding volatile register is the EEPROM-1
Array Configuration Register (EE1ACR). For the EE1DIVNCR (two 8-bit
registers: EE1DIVHNVR and EE1DIVLNVR), the corresponding volatile
register is the EEPROM-1 Divider Register (EE1DIV: EE1DIVH and EE1
DIVL).
•
•
•
EEPROM-1 Timebase Reference
EEPROM-1 Security Option
EEPROM-1 Block Protection
EEPROM-1 Memory
MC68HC908AZ60A — Rev 2.0
MOTOROLA
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