XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 117

• Manufacturer Part Number: XC908AS60ACFU
• Description: MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
• Manufacturer: Motorola Semiconductor Products

EEPROM-2 Erasing
MC68HC908AZ60A — Rev 2.0
MOTOROLA
NOTE:
C. The EEPGM bit cannot be set if the EELAT bit is cleared or a non-
valid EEPROM address is latched. This is to ensure proper
programming sequence. Once EEPGM is set, do not read any
EEPROM-2 locations; otherwise, the current program cycle will be
unsuccessful. When EEPGM is set, the on-board programming
sequence will be activated.
D. The delay time for the EEPGM bit to be cleared in AUTO mode is less
than t
For forward compatibility, software should not make any dependency on
this delay time.
E. Any attempt to clear both EEPGM and EELAT bits with a single
instruction will only clear EEPGM. This is to allow time for removal of
high voltage from the EEPROM-2 array.
The programmed state of an EEPROM bit is logic 0. Erasing changes
the state to a logic 1. Only EEPROM-2 bytes in the non-protected blocks
and the EE2NVR register can be erased.
Use the following procedure to erase a byte, block or the entire
EEPROM-2 array:
If using the AUTO mode, also set the AUTO bit in Step 1.
1. Configure EERAS1 and EERAS0 for byte, block or bulk erase; set
2. Byte erase: write any data to the desired address.
3. Set the EEPGM bit.
4. Wait for a time: t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Poll the EEPGM bit until it is cleared by the internal timer.
EEPGM
EELAT in EE2CR.
Block erase: write any data to an address within the desired
block.
Bulk erase: write any data to an address within the array.
t
EEBULK.
(B)
. However, on other MCUs, this delay time may be different.
for bulk erase.
EEPROM-2 Memory
EEFPV
EEBYTE
(A)
(C)
, for the erasing voltage to fall. Go to Step 8.
Go to Step 7 if AUTO is set.
for byte erase; t
EEBLOCK
Functional Description
EEPROM-2 Memory
for block erase;
(B)
Technical Data
(B)
(D)
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