XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 98
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XC908AS60ACFU
Manufacturer Part Number
XC908AS60ACFU
Description
MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
Manufacturer
Motorola Semiconductor Products
Datasheet
1.XC908AS60ACFU.pdf
(576 pages)
- Current page: 98 of 576
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EEPROM-1 Memory
Technical Data
98
NOTE:
A. Setting the EELAT bit configures the address and data buses to latch
data for erasing the array. Only valid EEPROM-1 addresses will be
latched. If EELAT is set, other writes to the EE1CR will be allowed after
a valid EEPROM-1 write.
B. If more than one valid EEPROM write occurs, the last address and
data will be latched overriding the previous address and data. Once data
is written to the desired address, do not read EEPROM-1 locations other
than the written location. (Reading an EEPROM location returns the
latched data and causes the read address to be latched).
C. The EEPGM bit cannot be set if the EELAT bit is cleared or a non-
valid EEPROM address is latched. This is to ensure proper
programming sequence. Once EEPGM is set, do not read any
EEPROM-1 locations; otherwise, the current program cycle will be
unsuccessful. When EEPGM is set, the on-board programming
sequence will be activated.
D. The delay time for the EEPGM bit to be cleared in AUTO mode is less
than t
time may be different. For forward compatibility, software should not
make any dependency on this delay time.
E. Any attempt to clear both EEPGM and EELAT bits with a single
instruction will only clear EEPGM. This is to allow time for removal of
high voltage from the EEPROM-1 array.
4. Wait for a time: t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Poll the EEPGM bit until it is cleared by the internal timer.
8. Clear EELAT bits.
EEBYTE
t
EEBULK.
/t
EEBLOCK
for bulk erase.
EEPROM-1 Memory
EEFPV
EEBYTE
/t
(E)
EEBULK
, for the erasing voltage to fall. Go to Step 8.
for byte erase; t
. However, on other MCUs, this delay
MC68HC908AZ60A — Rev 2.0
EEBLOCK
for block erase;
MOTOROLA
(D)
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