UPD70F3738GF-GAS-AX Renesas Electronics America, UPD70F3738GF-GAS-AX Datasheet - Page 904

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UPD70F3738GF-GAS-AX

Manufacturer Part Number
UPD70F3738GF-GAS-AX
Description
MCU 32BIT V850ES/JX3-L 100-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3-Lr
Datasheet

Specifications of UPD70F3738GF-GAS-AX

Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
84
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3738GF-GAS-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Note This is possible by selecting the entire memory area for the block erase function.
program command prohibit, read command prohibit, and boot block cluster rewrite prohibit functions are enabled by
default after shipment, and security settings can be specified only by rewriting via on-board/off-board programming.
Each security function can be used in combination with the others at the same time.
902
Blank check
Chip erasure
Block erasure
Program
Verify/checksum
Read
Security setting
Chip erase command prohibit
Block erase command prohibit
Program command prohibit
Read command prohibit
Boot block cluster rewrite prohibit
The following table lists the security functions. The chip erase command prohibit, block erase command prohibit,
Function
Function
The erasure status of the entire memory is
checked.
The contents of the entire memory area
are erased all at once.
The contents of specified memory blocks
are erased.
Writing to specified addresses, and a
verify check to see if the write level is
secured, are performed.
Data read from the flash memory is
compared with data transferred from the
flash memory programmer.
Data written to the flash memory is read.
Use of the block erase command, chip
erase command, program command, and
read command, and boot area rewrite, are
prohibited.
Functional Outline
Execution of block erase and chip erase commands on all the blocks is prohibited. Once
prohibition is set, setting of prohibition cannot be initialized because the chip erase
command cannot be executed.
Execution of a block erase command on all blocks is prohibited. Setting of prohibition
can be initialized by execution of a chip erase command.
Execution of program and block erase commands on all the blocks are prohibited.
Setting of prohibition can be initialized by execution of the chip erase command.
Execution of read command on all the blocks is prohibited. Setting of prohibition can be
initialized by execution of the chip erase command.
Boot block clusters from block 0 to the specified last block can be protected. The
protected boot block clusters cannot be rewritten (erased and written). Setting of
prohibition cannot be initialized by execution of the chip erase command.
The following can be specified as the last block:
μ
μ
μ
μ
PD70F3737: block 63
PD70F3738: block 127
PD70F3792: block 95
PD70F3793: block 127
Table 30-3. Security Functions
CHAPTER 30 FLASH MEMORY
Table 30-2. Basic Functions
User’s Manual U18953EJ5V0UD
On-Board/Off-Board
Programming
Function Outline
Support (√: Supported, ×: Not supported)
(Supported only when setting
is changed from enable to
(Can be read by user
Self Programming
program)
disable)
×
Note
×
×
×

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